发明名称 |
III-N MATERIAL STRUCTURE FOR GATE-RECESSED TRANSISTORS |
摘要 |
III-N transistors with recessed gates. An epitaxial stack includes a doped III-N source/drain layer and a III-N etch stop layer disposed between a the source/drain layer and a III-N channel layer. An etch process, e.g., utilizing photochemical oxidation, selectively etches the source/drain layer over the etch stop layer. A gate electrode is disposed over the etch stop layer to form a recessed-gate III-N HEMT. At least a portion of the etch stop layer may be oxidized with a gate electrode over the oxidized etch stop layer for a recessed gate III-N MOS-HEMT including a III-N oxide. A high-k dielectric may be formed over the oxidized etch stop layer with a gate electrode over the high-k dielectric to form a recessed gate III-N MOS-HEMT having a composite gate dielectric stack.
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申请公布号 |
US2013292698(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201113976840 |
申请日期 |
2011.12.23 |
申请人 |
THEN HAN WUI;RADOSAVLJEVIC MARKO;SHAH UDAY;MUKHERJEE NILOY;PILLARISETTY RAVI;CHU-KUNG BENJAMIN;KAVALIEROS JACK T.;CHAU ROBERT S. |
发明人 |
THEN HAN WUI;RADOSAVLJEVIC MARKO;SHAH UDAY;MUKHERJEE NILOY;PILLARISETTY RAVI;CHU-KUNG BENJAMIN;KAVALIEROS JACK T.;CHAU ROBERT S. |
分类号 |
H01L29/423;H01L29/40 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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