| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-output and high-luminance semiconductor laser that has high yield and is excellent in mass productivity and reliability.SOLUTION: A semiconductor laser device includes: a semiconductor substrate; a laser active region 10 that is provided on the semiconductor substrate and is sandwiched between a first reflective surface and a second reflective surface that are inclined at 45° with respect to the normal line of a surface of the semiconductor substrate; and an electrode 1, a first reflective film, and a partial reflective film 3 that are formed on the laser active region. In the semiconductor laser device, a laser oscillation can be obtained in the laser active region by passing current between the electrode and the semiconductor substrate. Light occurring in the laser active region is reflected by the first reflective surface and then is incident in the first reflective film and the partial reflective film, and a part of the incident light transmits through the partial reflective film to be output. |
