发明名称 |
MAGNETIC MEMORY DEVICES AND METHODS OF OPERATING THE SAME |
摘要 |
A magnetic memory device includes: a free layer for storing information; and a reference layer disposed on a first surface of the free layer. The reference layer includes at least two magnetic domains and a magnetic domain wall between the at least two magnetic domains. The reference layer extends past both ends of the free layer. The magnetic memory device further includes a switching element connected to a second surface of the free layer. Another magnetic memory device includes: a first reference layer having a first magnetic domain wall; a second reference layer having a second magnetic domain wall; and a memory structure between the first and second reference layers. The memory structure includes: a first free layer adjacent to the first reference layer; a second free layer adjacent to the second reference layer; and a switching element between the first and second free layers.
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申请公布号 |
US2013294151(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313939879 |
申请日期 |
2013.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG IN-JUN |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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