发明名称 |
THERMOELECTRIC MATERIAL HAVING HIGH-DENSITY INTERFACE MISFIT DISLOCATION, AND THERMOELECTRIC DEVICE AND MODULE COMPRISING THE SAME |
摘要 |
<p>A thermoelectric material having high efficiency, a thermoelectric element including the same, and a thermoelectric element module are provided. The thermoelectric reduces specific thermal conductivity by forming grain boundary ego density interface misfit potential between a thermoelectric matrix and a metal additive or thermoelectric grain in order to be used for various thermoelectric devices.</p> |
申请公布号 |
KR20130121450(A) |
申请公布日期 |
2013.11.06 |
申请号 |
KR20120044666 |
申请日期 |
2012.04.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SANG IL;LEE, KYU HYOUNG;HWANG, SUNG WOO;AHN, KYUNG HAN |
分类号 |
H01L35/14;H01L35/34 |
主分类号 |
H01L35/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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