发明名称 THERMOELECTRIC MATERIAL HAVING HIGH-DENSITY INTERFACE MISFIT DISLOCATION, AND THERMOELECTRIC DEVICE AND MODULE COMPRISING THE SAME
摘要 <p>A thermoelectric material having high efficiency, a thermoelectric element including the same, and a thermoelectric element module are provided. The thermoelectric reduces specific thermal conductivity by forming grain boundary ego density interface misfit potential between a thermoelectric matrix and a metal additive or thermoelectric grain in order to be used for various thermoelectric devices.</p>
申请公布号 KR20130121450(A) 申请公布日期 2013.11.06
申请号 KR20120044666 申请日期 2012.04.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SANG IL;LEE, KYU HYOUNG;HWANG, SUNG WOO;AHN, KYUNG HAN
分类号 H01L35/14;H01L35/34 主分类号 H01L35/14
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