A device comprising an electronic component with high switching speed

摘要

The device (10) has a control circuit (14) designed to control one of electronic components (12) e.g. MOSFET transistors. Each component is connected to the control circuit by a wired connection (18). Each component has switching speed higher than 10 kilo ampere per microsecond or higher than 20 kV per micro second. The connection has inductance lower than 10 nano henries. The control circuit includes a signal amplifier, and the connection connects the amplifier to the component. The components are operative at switching frequency between 1 and 500 KHz.