| 摘要 |
The present invention relates to an apparatus and a method for processing a material, particularly, to an apparatus and a method for processing a material capable of plasma-depositing a silicon layer on a conductive a core martial. In the apparatus and for processing the material, a vacuum pump forms a vacuum state in the space part of a vacuum chamber. A plasma generation unit is installed in the vacuum chamber and makes plasma a supplied deposition gas by applying power. A power supply unit supplies the power to promote the deposition of the deposition martial by the deposition gas at both ends of the material passing through a plasma region generated by the plasma generation unit. |
