| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite semiconductor device having a semiconductor element and a sensor element formed on the same semiconductor layer and capable of detecting the temperature of the semiconductor element in a wide temperature region. SOLUTION: In this composite semiconductor device, an FRD and a plurality of SBDs are formed on a first semiconductor layer 1. In the composite semiconductor device, the FRD11 is composed of the first semiconductor layer 1, a P-type second semiconductor layer 2 formed on the first semiconductor layer 1 in an island-like shape, and having a PN junction formed with the first semiconductor layer 1, and a first electrode 5 formed on the second semiconductor layer 2 and electrically connected to the semiconductor layer 2; the SBD 12a is formed with a first electrode 5 forming a Schottky junction between the first semiconductor layer 1 and itself; the SBD 12b is separated from the SBD 12a, and formed with a second electrode 6 forming a Schottky junction between the first semiconductor layer 1 and itself; and the first electrode 5 and the second electrode 6 are formed of materials having leakage current temperature characteristics different from each other. COPYRIGHT: (C)2009,JPO&INPIT |
