A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS AND BLOCKING PORTIONS

摘要

Disclosed are a device and a method of manufacturing the device. The device includes a first conduction layer arranged on a substrate. The first conduction layer includes first conduction line extended in a first direction. The device includes a second conduction layer arranged on the first conduction layer. The second conduction layer includes second conduction lines in a second direction. The device includes a self-aligned interconnect formed on the interface electrically connecting the first conduction line among the first conduction lines to the second conduction line among the second conduction lines. The device includes a blocking part formed between the second conduction line among the first conduction lines and the second conduction line among the second conduction lines. [Reference numerals] (102) Provide a substrate including a first intercalation dielectric substance (ILD1) and a first metal (M1) layer;(104) Form a second intercalation dielectric substance (ILD2) layer over the ILD1 and a first photo resist over the ILD2 layer;(106) Pattern a first photo resist to define a block layer and etch the ILD2 layer by using the patterned first photo resist to define a block layer area in the ILD2 layer;(108) Remove the first photo resist and form the second photo resist over the ILD2 layer;(110) Pattern the second photo resist to define an M2 layer and etch the ILD2 layer by using the patterned second photo resist to define an M2 layer area in the ILD2 layer and expose the upper surface of the M1 layer;(112) Deposit a conductive material on the M2 layer area in the ILD2 layer and on the surface of the upper part of the exposed M1 layer in order to remove the second photo resist and to be a self-aligned interconnection unit between the interfaces of the M1 and M2 layers;(114) Complete manufacturing