发明名称 MONOMER, POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
摘要 <p>The present invention relates to a polymeric monomer which is denoted by chemical formula 1 (in the chemical formula 1: R1 is a methyl group, an ethyl group, a propyl group, a vinyl group, or an ethynyl group; a circle is a cyclalkyl in a ring type or an oil exchanging type with 3-12 carbons, which is capable of including a double bond except for a case when the circle is a cyclohexyl group and R1 is the ethyl group; R2 is a hydrogen atom, or an alkyl group in a linear type, a branched type, or a ring type with 1-4 carbons; and m is a fixed number selected from 0-4). A positive resist material of the present invention has high alkali dissolution speed contrast before and after an exposure, high resolution by preventing the pattern collapse through controlling the expansion inside an alkali developing solution, proper edge roughness and pattern formation after the exposure, and excellent etching resistance.</p>
申请公布号 KR20130121025(A) 申请公布日期 2013.11.05
申请号 KR20130043421 申请日期 2013.04.19
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;HASEGAWA KOJI
分类号 C07C43/188;C08F220/10;G03F7/004 主分类号 C07C43/188
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