ELECTRO-STATIC DISCHARGE PROTECTION DEVICE

摘要

The present invention provides an electrostatic discharge protection device which has high tolerant characteristics by reducing current filamentation using a structure having both a vertical current flow and a horizontal current flow and which has high holding voltage characteristics by preventing latch-up generated in a normal condition. The electrostatic discharge protection device according to the first invention comprises a first well region which is formed on a semiconductor substrate and includes a first semiconductor region; a sink region which is formed near the first well region; a second well region which includes a second semiconductor region and a third semiconductor region adjacent to a floating region electrically floated; a first electrode electrically connected to the sink region and the first semiconductor region; and a second electrode which is electrically connected to the second semiconductor region and the third semiconductor region.