POWER DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A power device and a method for manufacturing the same according to the technical concept of the present invention are provided to have a field stop layer based on a semiconductor substrate between a collector region and a drift region in the structure of FS-IGBT, easily control the thickness of the field stop layer, and impurity concentrations in the collector region, and improve the function of the field stop layer. The power device comprises: a field stop layer which is formed on the basis of a first conductive semiconductor substrate; an implanted field stop layer which is formed on the field stop layer through a first conductive ion implant and has a part having concentration higher than that of the field stop layer; a drift region which is formed on the implanted field stop layer by growing a first conductive epitaxial layer and has concentration lower than that of the field stop layer; a base region of a second conductive type which is formed on the upper part of the drift region; an emitter region of a first conductive type which is formed on a surface part in a base region; a gate electrode which is formed by interposing a gate insulating layer on the drift region, the base region, and the emitter region; and a collector region of a second conductive type which is formed on the lower part of the field stop layer.