| 摘要 |
An amorphous film is irradiated with pulse laser light having a wavelength of 340 to 358 nm and an energy density of 130 to 240 mJ/cm2, with a shot number of 1 to 10, and is thereby heated to a temperature not exceeding a crystalline melting point and crystallized. The pulse width, frequency, and minor axis width of the pulse laser light are preferably set to 5 to 100 ns, 6 to 10 kHz, and 1.0 mm or less, respectively, and the film is relatively scanned with the pulse laser light at a scanning speed of 50 to 1000 mm/s. As a result, a uniform and fine crystalline film having less variation in crystalline grain diameter can be effectively fabricated from the amorphous film, without damaging the substrate. |
