发明名称 PARTICLE FOR FORMATION OF SEMICONDUCTOR LAYER, METHOD OF PRODUCING SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor layer and a photoelectric conversion device which have a high photoelectric conversion efficiency.SOLUTION: A particle for formation of a semiconductor layer mainly includes a metal chalcogenide and also includes an alkali metal element. A method of producing the semiconductor layer includes a process of forming a film containing the particles for formation of a semiconductor layer and a process of heating the film to form a semiconductor layer. A method of manufacturing a photoelectric conversion device 11 includes a process of forming a first semiconductor layer 3 on an electrode 2 by the method of producing the semiconductor layer and a process of forming a second semiconductor layer 4 having a type of conduction different from that of the first semiconductor layer 3 on the first semiconductor layer 3.
申请公布号 JP2013224239(A) 申请公布日期 2013.10.31
申请号 JP20120097571 申请日期 2012.04.23
申请人 KYOCERA CORP 发明人 TANAKA ISAMU
分类号 C01B19/00;H01L31/04 主分类号 C01B19/00
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