| 摘要 |
Methods for filling high aspect ratio features are provided herein. In some embodiments, method of filling a high aspect ratio feature formed in a substrate includes implanting a first species using a first plasma into first surfaces of a first layer formed along the surfaces of the high aspect ratio feature to form implanted first surfaces such that a second species subsequently deposited atop the first layer has an increased mobility along the implanted first surfaces relative to the first surfaces, wherein the first layer substantially prevents the second species from diffusing completely through the first layer; and subsequently filling the high aspect ratio feature with the second species.
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