发明名称 REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF FORMING A PATTERN USING THE SAME
摘要 According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.
申请公布号 US2013288166(A1) 申请公布日期 2013.10.31
申请号 US201313918693 申请日期 2013.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE DONG-GUN;KIM SEONG-SUE;KIM TAE-GEUN
分类号 G03F1/24 主分类号 G03F1/24
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