| 摘要 |
An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region of those electron beams is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane of the objective lens system having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.
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