发明名称 |
DEVICE AND METHODS FOR HIGH-K AND METAL GATE STACKS |
摘要 |
A semiconductor device having five gate stacks on different regions of a substrate and methods of making the same are described. The device includes a semiconductor substrate and isolation features to separate the different regions on the substrate. The different regions include a p-type field-effect transistor (pFET) core region, an input/output pFET (pFET IO) region, an n-type field-effect transistor (nFET) core region, an input/output nFET (nFET IO) region, and a high-resistor region. |
申请公布号 |
US2013285151(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213457079 |
申请日期 |
2012.04.26 |
申请人 |
WU WEI CHENG;CHEN PO-NIEN;NG JIN-AUN;YOUNG BAO-RU;CHUANG HARRY HAK-LAY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU WEI CHENG;CHEN PO-NIEN;NG JIN-AUN;YOUNG BAO-RU;CHUANG HARRY HAK-LAY |
分类号 |
H01L27/092;H01L21/336 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|