A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent the agglomeration phenomenon of a compound by forming metal-semiconductor compounds after a contact structure is formed. CONSTITUTION: Semiconductor patterns (24) are formed on a semiconductor substrate. A lower insulating layer covering a lower interlayer dielectric is formed. A contact structure (48w) is separated from the semiconductor patterns. Insulating patterns covering the contact structure are formed. Metal-semiconductor compounds are formed on the exposed semiconductor patterns.