GALLIUM NITRIDE CRYSTAL AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide gallium nitride in which the generation of a stacking fault is controlled, and the main surface is a nonpolar surface or a semipolar surface.SOLUTION: In a gallium nitride crystal, the emission intensity ratio (BSF peak/NBE peak) of the emission (BSF peak) at 3.41 eV to the band-edge emission (NBE peak) of a gallium nitride crystal growth layer which is measured by low temperature PL measurement is 0.1 or below.