发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To form a thin film having low concentration of an impurity such as chlorine in a low temperature region.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a thin film on a substrate by performing a cycle a predetermine number of times, the cycle including a process of supplying a material gas to the substrate, and a process of supplying excited species generated by plasma excitation of a reaction gas at a plurality of excitation parts provided lateral to the substrate from respective excitation parts to the substrate. In the process of supplying the excited species from respective excitation parts, an in-plane distribution of the excited species in the substrate from at least one excitation part among the plurality of excitation parts is made different from an in-plane distribution of the excited species supplied from another excitation part different from the at least one excitation part. |
申请公布号 |
JP2013225655(A) |
申请公布日期 |
2013.10.31 |
申请号 |
JP20130016237 |
申请日期 |
2013.01.30 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
SANO ATSUSHI;HIROSE YOSHIRO;MAEDA KIYOHIKO;OKUDA KAZUYUKI;YAMAMOTO TAKAHARU |
分类号 |
H01L21/318;C23C16/455;H01L21/31;H01L21/316 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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