发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To form a thin film having low concentration of an impurity such as chlorine in a low temperature region.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a thin film on a substrate by performing a cycle a predetermine number of times, the cycle including a process of supplying a material gas to the substrate, and a process of supplying excited species generated by plasma excitation of a reaction gas at a plurality of excitation parts provided lateral to the substrate from respective excitation parts to the substrate. In the process of supplying the excited species from respective excitation parts, an in-plane distribution of the excited species in the substrate from at least one excitation part among the plurality of excitation parts is made different from an in-plane distribution of the excited species supplied from another excitation part different from the at least one excitation part.
申请公布号 JP2013225655(A) 申请公布日期 2013.10.31
申请号 JP20130016237 申请日期 2013.01.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SANO ATSUSHI;HIROSE YOSHIRO;MAEDA KIYOHIKO;OKUDA KAZUYUKI;YAMAMOTO TAKAHARU
分类号 H01L21/318;C23C16/455;H01L21/31;H01L21/316 主分类号 H01L21/318
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