| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of reducing a pattern formed in a thin film on a substrate, by utilizing a phase separation structure of a block polymer.SOLUTION: The pattern reduction method includes: a step of forming, on a substrate which has a thin film having a pattern formed therein on a surface, a layer including a block copolymer using a composition so as to cover a bottom surface of a concave portion of the pattern; a step of separating phases of the layer including the block copolymer; and a step of selectively removing phases other than a phase comprising a Pblock in the layer including the block copolymer. The composition comprises (A) a block copolymer where the Pblock and a block being incompatible with the Pblock and having an etching selection ratio of one or more relative to the Pblock, (B) a random copolymer or a homopolymer compatible with blocks other than the Pblock. (C) a random copolymer or a homopolymer compatible with the Pblock, and (D) an organic solvent. |
