发明名称 |
Semiconductor light emitting device and manufacturing method of the same |
摘要 |
<p>According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.</p> |
申请公布号 |
EP2657993(A2) |
申请公布日期 |
2013.10.30 |
申请号 |
EP20120182359 |
申请日期 |
2012.08.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOJIMA, AKIHIRO;FURUYAMA, HIDETO;SHIMADA, MIYOKO;AKIMOTO, YOSUKE |
分类号 |
H01L33/22;H01L33/20;H01L33/24;H01L33/44 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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