发明名称 |
Semiconductor device having vertical MOS transistor and method for manufacturing the semiconductor device |
摘要 |
In a vertical MOS transistor in which a semiconductor pillar is formed by etching a semiconductor substrate in a portion surrounded by an isolation film, the semiconductor pillar is covered with a gate insulating film and a gate electrode to be made a channel part, and diffusion layers to be a source and a drain are included on a top and a bottom of the channel part, electrode which controls potential of a gate electrode material is formed in gate electrode material formed on a side surface of isolation film, in order to eliminate a parasitic MOS operation by the gate electrode material remaining on the side surface of the isolation film.
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申请公布号 |
US8569830(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US20080230562 |
申请日期 |
2008.09.02 |
申请人 |
OYU KIYONORI;TAKAISHI YOSHIHIRO;KOSUGE YU;ELPIDA MEMORY, INC. |
发明人 |
OYU KIYONORI;TAKAISHI YOSHIHIRO;KOSUGE YU |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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