A field effect transistor includes: a buffer layer that is formed on a substrate; a high resistance layer or a foundation layer that is formed on the buffer layer; a carbon-containing carrier concentration controlling layer that is formed on the high resistance layer or the foundation layer; a carrier traveling layer that is formed on the carrier concentration controlling layer; a carrier supplying layer that is formed on the carrier traveling layer; a recess that is formed from the carrier supplying layer up to a predetermined depth; source/drain electrodes that are formed on the carrier supplying layer with the recess intervening therebetween; a gate insulating film that is formed on the carrier supplying layer so as to cover the recess; and a gate electrode that is formed on the gate insulating film in the recess.
申请公布号
US8569800(B2)
申请公布日期
2013.10.29
申请号
US201113076980
申请日期
2011.03.31
申请人
IKEDA NARIAKI;KOKAWA TAKUYA;IWAMI MASAYUKI;KATO SADAHIRO;FURUKAWA ELECTRIC CO., LTD.