发明名称 |
Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) |
摘要 |
Methods and provided for fabricating a semiconductor IC having a hardened shallow trench isolation (STI). In accordance with one embodiment the method includes providing a semiconductor substrate and forming an etch mask having an opening exposing a portion the semiconductor substrate. The exposed portion is etched to form a trench extending into the semiconductor substrate and an oxide is deposited to at least partially fill the trench. At least the surface portion of the oxide is plasma nitrided to form a nitrided oxide layer and then the etch mask is removed.
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申请公布号 |
US8569143(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113167558 |
申请日期 |
2011.06.23 |
申请人 |
KAMMLER THORSTEN;RADECKER JOERG;STRECK CHRISTOF;GLOBALFOUNDRIES, INC. |
发明人 |
KAMMLER THORSTEN;RADECKER JOERG;STRECK CHRISTOF |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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