| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-withstand-voltage semiconductor device with suppressed collapse.SOLUTION: A semiconductor device comprises: a buffer layer formed on a substrate and composed of a group-III nitride compound semiconductor; an electron transit layer formed on the buffer layer and composed of the group-III nitride compound semiconductor; an electron supply layer formed on the electron transit layer and composed of a group-III nitride compound semiconductor having a higher band-gap energy than the electron transit layer; a first electrode formed on the electron supply layer; and a second electrode formed on the electron supply layer, in which a negative bias voltage is applied with respect to the first electrode in a current blocking state, and having a contact area to the electron supply layer larger than a contact area of the first electrode to the electron supply layer. The buffer layer has an electrical conduction layer, which has electrical conductivity in the stacking surface direction, in its inside or at the interface between the buffer layer and the electron transit layer. |
