PIT FORMATION METHOD TO SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL USING THE SAME, AND METHOD FOR CONFIRMING DISLOCATION POSITION IN SILICON CARBIDE CRYSTAL AND SURFACE OF SILICON CARBIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method capable of easily forming a pit to a silicon carbide crystal and a method for manufacturing a silicon carbide crystal using the same, and a method for confirming a dislocation position in a silicon carbide crystal and a surface of the silicon carbide crystal.SOLUTION: A pit is formed on a surface centering on a dislocation by heating a silicon carbide crystal with a dislocation existing inside extending up to the surface in an atmosphere with molybdenum existing, and a crystal layer made of silicon carbide is made to grow on the surface with the pit formed by this method so as to cover the pit to manufacture a silicon carbide crystal laminate. The silicon carbide crystal has the internally existing dislocation extended to the surface and has the pit centering on the dislocation on the surface. Further, a pit centering the location is formed on the surface by heating the silicon carbide crystal under the atmosphere to confirm the position of the dislocation in the surface by the position of the pit.