发明名称 Multi-wavelength infrared image sensor and manufacturing method of the same
摘要 PURPOSE: A multi-wavelength infrared image sensor and manufacturing method thereof are provided to precisely measure an absolute temperature of an object, soil distribution, and atmospheric gas distribution which are hard to observe with a single-color infrared sensor. CONSTITUTION: A multi-wavelength infrared image sensor includes a detection element (10), a readout circuit (20), and an indium bump (30). One or more super-pixels (11) are formed on the top surface of the detection element. A detector active layer corresponding to the super-pixels is formed on the underside of the detection element. The readout circuit is connected to the underside of the detection element and reads signals of the detector actively layer. The indium bump connects the detector active layer and the readout circuit.
申请公布号 KR101321749(B1) 申请公布日期 2013.10.28
申请号 KR20110146142 申请日期 2011.12.29
申请人 发明人
分类号 G01J1/02;G01J3/457 主分类号 G01J1/02
代理机构 代理人
主权项
地址