| 摘要 |
A light emitting device and a method for manufacturing the same are provided to extend a lifetime by preventing contaminants from penetrating into an organic light emitting layer. A light emitting device(300) includes a substrate(302), a thin film transistor unit, and a light emitting unit. The thin film transistor is formed on the substrate. The light emitting unit includes a first passivation layer(320), a first electrode(322), a second passivation layer(324), an emission layer, and a second electrode. The first passivation layer is positioned on the thin film transistor unit and has contact holes(A1-A4) to expose a part of a drain electrode(318b1) of the thin film transistor unit. The first electrode is electrically connected to the drain electrode of the thin film transistor unit. The second passivation layer is positioned on the first electrode, has a bank to expose a part of the first electrode, and includes a depressed part at one side of the bank. The light emitting layer is formed on the first electrode. The second electrode is positioned on the light emitting layer. |
