发明名称 |
MASK AND METHOD FOR FORMING THE SAME |
摘要 |
A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
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申请公布号 |
US2013280644(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213451767 |
申请日期 |
2012.04.20 |
申请人 |
LIN YUN-YUE;LIEN TA-CHENG;LEE HSIN-CHANG;YEN ANTHONY;CHEN CHIA-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YUN-YUE;LIEN TA-CHENG;LEE HSIN-CHANG;YEN ANTHONY;CHEN CHIA-JEN |
分类号 |
G03F1/48;G03F1/22;G03F1/26;G03F1/30 |
主分类号 |
G03F1/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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