发明名称 MASK AND METHOD FOR FORMING THE SAME
摘要 A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
申请公布号 US2013280644(A1) 申请公布日期 2013.10.24
申请号 US201213451767 申请日期 2012.04.20
申请人 LIN YUN-YUE;LIEN TA-CHENG;LEE HSIN-CHANG;YEN ANTHONY;CHEN CHIA-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN YUN-YUE;LIEN TA-CHENG;LEE HSIN-CHANG;YEN ANTHONY;CHEN CHIA-JEN
分类号 G03F1/48;G03F1/22;G03F1/26;G03F1/30 主分类号 G03F1/48
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