发明名称 |
Method of manufacturing thin film solar cell, involves depositing transparent conductive oxide layer as front contact on protective layer by pulsed magnetron sputtering with specific pulse frequency and power density during a pulse |
摘要 |
<p>The method involves depositing a metal layer as electrical back contact (3) over a substrate (2). A compound semiconductor is deposited as absorber layer (4) on the electrical back contact. A transparent protective layer (7) is deposited on the absorber layer. A transparent conductive oxide layer is deposited as front contact (8) on the protective layer by pulsed magnetron sputtering with pulse frequency of 100 Hz and power density of 500 W/cm 2> during a pulse. The transparent conductive oxide layer is made of aluminum-doped zinc oxide.</p> |
申请公布号 |
DE102012103578(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
DE201210103578 |
申请日期 |
2012.04.24 |
申请人 |
VON ARDENNE ANLAGENTECHNIK GMBH |
发明人 |
LINS, VOLKER;SCHREIL, MANFRED |
分类号 |
H01L31/18;C23C14/35;H01L21/283;H01L31/0216;H01L31/0749 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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