发明名称 |
SCHOTTKY DIODE WITH OPPOSITE-POLARITY SCHOTTKY DIODE FIELD GUARD RING |
摘要 |
In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode.
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申请公布号 |
US2013277791(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213451350 |
申请日期 |
2012.04.19 |
申请人 |
NASSAR CHRIS;HAHN DAN;KIM SUNGLYONG;KIM JONGJIB |
发明人 |
NASSAR CHRIS;HAHN DAN;KIM SUNGLYONG;KIM JONGJIB |
分类号 |
H01L29/872;H01L21/329 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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