发明名称 |
APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR |
摘要 |
To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions. |
申请公布号 |
US2013280896(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201113824383 |
申请日期 |
2011.09.21 |
申请人 |
OHKUBO SHUICHI;YAMAGUCHI MASATSUGU;JNC CORPORATION;TOHO TITANIUM CO., LTD.;JX NIPPON MINING & METALS CORPORATION |
发明人 |
OHKUBO SHUICHI;YAMAGUCHI MASATSUGU |
分类号 |
H01L21/67;H01L21/02 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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