发明名称 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR
摘要 To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.
申请公布号 US2013280896(A1) 申请公布日期 2013.10.24
申请号 US201113824383 申请日期 2011.09.21
申请人 OHKUBO SHUICHI;YAMAGUCHI MASATSUGU;JNC CORPORATION;TOHO TITANIUM CO., LTD.;JX NIPPON MINING & METALS CORPORATION 发明人 OHKUBO SHUICHI;YAMAGUCHI MASATSUGU
分类号 H01L21/67;H01L21/02 主分类号 H01L21/67
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