发明名称 Capacitive Sensors and Methods for Forming the Same
摘要 A device includes a semiconductor substrate, and a capacitive sensor having a back-plate, wherein the back-plate forms a first capacitor plate of the capacitive sensor. The back-plate is a portion of the semiconductor substrate. A conductive membrane is spaced apart from the semiconductor substrate by an air-gap. A capacitance of the capacitive sensor is configured to change in response to a movement of the polysilicon membrane.
申请公布号 US2013277771(A1) 申请公布日期 2013.10.24
申请号 US201213452037 申请日期 2012.04.20
申请人 CHOU BRUCE C.S.;TU JUNG-KUO;FAN CHEN-CHIH;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHOU BRUCE C.S.;TU JUNG-KUO;FAN CHEN-CHIH
分类号 H01L29/84;H01L21/02 主分类号 H01L29/84
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