发明名称 Methods for the Formation of a Trap Rich Layer
摘要 An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.
申请公布号 US2013280884(A1) 申请公布日期 2013.10.24
申请号 US201313919947 申请日期 2013.06.17
申请人 IO SEMICONDUCTOR, INC. 发明人 BRINDLE CHRIS;STUBER MICHAEL A.;MOLIN STUART B.
分类号 H01L21/30 主分类号 H01L21/30
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