发明名称 |
MEMORY CELL BASED ON ELECTRO-STATICALLY FORMED NANOWIRE |
摘要 |
<p>A memory cell including at least one electrostatically induced virtual nanowire by which it stores and reads data. In an exemplary embodiment of the invention, the nanowire is created using two lateral gates whose bias determines the nanowire location and thereby the location of a memory storage within said cell.</p> |
申请公布号 |
WO2013156990(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
WO2013IL50244 |
申请日期 |
2013.03.14 |
申请人 |
RAMOT AT TEL-AVIV UNIVERSITY LTD. |
发明人 |
SHALEV, GIL;ROSENWAKS, YOSSI |
分类号 |
H01L29/792;H01L29/788 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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