发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor. |
申请公布号 |
US2013280871(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201313733312 |
申请日期 |
2013.01.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HYUN SUNG-WOO;LEE SUN-GHIL |
分类号 |
H01L21/8238;H01L29/66 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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