| 摘要 |
PURPOSE: A resistive random access memory device and a manufacturing method thereof are provided to write and store more information by vertically laminating a plurality of unit devices formed by a resistance change layer to implement a multi-resistance change state. CONSTITUTION: At least one first electrode (120) is arranged on a substrate (110) in a first direction. A first resistance change layer (130) is formed on the first electrode. At least one second electrode (140) is arranged on the first resistance change layer in a second direction across the first direction. A second resistance change layer (150) is formed on the second electrode. A third electrode (160) is arranged on the second resistance change layer in the first direction. |
