| 摘要 |
PURPOSE: A method for forming a through silicon via of a semiconductor wafer is provided to reduce manufacturing costs by applying a wet etching method instead of a dry etching method when the through silicon via is formed on the semiconductor wafer. CONSTITUTION: A semiconductor wafer with a crystal direction is prepared (S100). A through silicon via is formed on the semiconductor wafer by a wet etching method (S200). The semiconductor wafer with the through via hole is reinforced (S300). The through silicon via is formed by the wet etching method. The wet etching method is performed by using KOH solutions at 80±3 degrees centigrade. [Reference numerals] (AA) Start; (BB) Wet etching method, 33±5 wt% KOH etching solutions, 80±3 degrees centigrade; (CC) High-temperature nitriding process; (DD) End; (S100) Step where a semiconductor wafer with a crystal direction is prepared; (S200) Step where through silicon via is formed; (S300) Step where the semiconductor wafer is reinforced |
