发明名称 Low resistivity contact
摘要 Embodiments of a low resistivity contact to a semiconductor structure are disclosed. In one embodiment, a semiconductor structure includes a semiconductor layer, a semiconductor contact layer having a low bandgap on a surface of the semiconductor layer, and an electrode on a surface of the semiconductor contact layer opposite the semiconductor layer. The bandgap of the semiconductor contact layer is in a range of and including 0 to 0.2 electron-volts (eV), more preferably in a range of and including 0 to 0.1 eV, even more preferably in a range of and including 0 to 0.05 eV. Preferably, the semiconductor layer is p-type. In one particular embodiment, the semiconductor contact layer and the electrode form an ohmic contact to the p-type semiconductor layer and, as a result of the low bandgap of the semiconductor contact layer, the ohmic contact has a resistivity that is less than 1×10-6 ohms·cm2.
申请公布号 US8564129(B2) 申请公布日期 2013.10.22
申请号 US201213565960 申请日期 2012.08.03
申请人 THERRIEN ROBERT JOSEPH;REED JASON D.;RUMSEY JAIME A.;GRAY ALLEN L.;PHONONIC DEVICES, INC. 发明人 THERRIEN ROBERT JOSEPH;REED JASON D.;RUMSEY JAIME A.;GRAY ALLEN L.
分类号 H01L23/48;H01L29/43 主分类号 H01L23/48
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