发明名称 |
EEPROM cell structure and a method of fabricating the same |
摘要 |
An electrically erasable programmable read only memory (EEPROM) cell structure and a method of fabricating the same. The EEPROM cell comprising a substrate comprising two shallow trench isolation (STI) structures separated by a substrate portion; an intermediate patterned layer formed on the substrate such that the patterned layer covers respective portions of each STI structure; a floating gate bridging between the STI structures such that the floating gate extends over the intermediate patterned layer; a dielectric layer formed over the floating gate; and a control gate formed over the dielectric layer.
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申请公布号 |
US8564043(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201113005693 |
申请日期 |
2011.01.13 |
申请人 |
HUANG SHENG HE;HO ENG KEONG;PEH PING YAW;SYSTEMS ON SILICON MANUFACTURING CO. PTE. LTD. |
发明人 |
HUANG SHENG HE;HO ENG KEONG;PEH PING YAW |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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