| 摘要 |
PURPOSE: A nonvolatile memory, a writing method thereof, and a semiconductor device are provided to include a series of operations detecting and modifying defective bits as the writing operation of a write-once memory in addition to a data writing operation, thereby reducing the possibility of defective bit generation. CONSTITUTION: A first writing circuit writes data to a first memory cell and to multiple second memory cells. A timing control circuit (111) outputs a first control signal, which enables a verification circuit (105), to the verification circuit. The verification circuit compares first data stored in a data register and second data stored in a memory cell, where writing was performed, among the multiple second memory cells, and outputs a determination signal. The timing control circuit outputs a second control signal enabling a second writing circuit (110) according to the determination signal. The second writing circuit allocates an address to the first memory cell according to the second control signal. [Reference numerals] (AA) Decision signal |
