| 摘要 |
The method includes a step of growing an MgZnO-based single-crystal layer at a growth pressure of less than 10 kPa and a growth temperature equal to or greater than an upper limit temperature for ZnO single-crystal growth, wherein the MgZnO-based single-crystal layer is grown using a magnesium-based metal-organic compound having a Cp group, water vapor (H2O) and a zinc-based metal-organic compound that does not contain oxygen.
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