| 摘要 |
<p>Provided is a semiconductor recording device that is configured in a manner provided with an oxide semiconductor insulated gate FET having higher performance without incurrent the effect of unevenness in threshold voltage. In a memory cell (MC), the gate of a first transistor element (T1), the source of a second transistor element (T2), and one end of a capacitor element (Cm) are connected to each other, forming a recording node (Nm), and the drain of the first transistor element (T1) and the drain of the second transistor element (T2) are connected to each other, forming a control node (Nc). In each memory cell (MC) arrayed in the same column, the control node (Nc) is connected to a shared first control line (CL) extending in the column direction, the source of the first transistor element (T1) is connected to a shared data signal line (DL) extending in the column direction, the gate of the second transistor element is connected to an individual first selection line (WL), the other end of the capacitor element (Cm) is connected to an individual second selection line (GL), and for each first control line (CL), a switching element (SE) is provided such that one end is connected to the first control line (CL) and the other end is connected to a voltage supply line (VL).</p> |
