| 摘要 |
A semiconductor memory device is operated by, inter alia, selecting an even bit line or an odd bit line in response to a read command, and precharging the selected bit line by applying a precharge voltage to the selected bit line; changing potential of the selected bit line in response to a threshold voltage of a selected memory cell coupled to the selected bit line; precharging a non-selected bit line by applying a precharge voltage to the non-selected bit line; and sensing read data in accordance with the potential of the selected bit line.
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