发明名称 INTEGRATED CIRCUIT PROTECTION DURING HIGH-CURRENT ESD TESTING
摘要 A method of protecting devices within an integrated circuit during electro-static discharge (ESD) testing using an ESD test system is provided. The method includes applying a direct current (DC) bias voltage to an input of at least one device of the integrated circuit and applying an ESD simulated signal to at least one other input of the integrated circuit. The applied ESD simulated signal is conducted along a first current path to a first ground, while a low-current signal associated with the at least one device is conducted along a second current path to the second ground. The DC bias voltage is maintained between the input of the at least one device and the second ground at a substantially constant value in response to a signal variation on the second ground that results from the applied ESD simulated signal.
申请公布号 US2013271883(A1) 申请公布日期 2013.10.17
申请号 US201213446394 申请日期 2012.04.13
申请人 CHANG SHUNHUA;SARRO JAMES PAUL DI;GAUTHIER, JR. ROBERT J.;JACK NATHAN;MITRA SOUVICK;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHANG SHUNHUA;SARRO JAMES PAUL DI;GAUTHIER, JR. ROBERT J.;JACK NATHAN;MITRA SOUVICK
分类号 H02H9/04 主分类号 H02H9/04
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