发明名称 ION BEAM DEVICE, SAMPLE OBSERVATION METHOD, AND SAMPLE PREPARATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a sample observation device and a sample observation method that suppress an image disturbance due to electrification and allow a sample to be observed at high image resolution regardless of a rugged shape of a surface of the sample, in order to solve the conventional problem in which, when an electron irradiation surface of the sample is covered with an ion liquid and observed with an electron beam, the rugged shape of the surface of the sample changes resolution, and a film thickness of the ion liquid needs to be adjusted according to the rugged shape of the surface of the sample in order to keep the resolution constant.SOLUTION: A sample observation method includes irradiating a sample in which at least a surface to be irradiated with an ion beam is covered with a solution containing an ion liquid, with an ion beam generated by a gas electric field ionization ion source to acquire an image of the sample. An ion beam device includes: a film thickness determination unit for determining a film thickness from a change of the image when an absorption current or acceleration voltage is changed; and a liquid medium supply unit for supplying the ion liquid onto the sample.
申请公布号 JP2013213747(A) 申请公布日期 2013.10.17
申请号 JP20120084423 申请日期 2012.04.03
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MUTO HIROYUKI;KAWANAMI YOSHIMI
分类号 G01N23/225;G01N1/28;H01J37/20;H01J37/26 主分类号 G01N23/225
代理机构 代理人
主权项
地址