发明名称 |
3D NON-VOLATILE STORAGE WITH TRANSISTOR DECODING STRUCTURE |
摘要 |
Disclosed herein are 3D stacked memory devices having WL select gates. The 3D stacked memory device could have NAND strings. The WL select gates may be located adjacent to a word line hookup area of a word line plate. The word line plate may be driven by a word line plate driver and may have many word lines. The WL select gates may select individual word lines or groups of word lines. Therefore, smaller units that the entire block may be selected. This may reduce capacitive loading. The WL select gates may include thin film transistors. 3D decoding may be provided in a 3D stacked memory device using the WL select gates.
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申请公布号 |
US2013272069(A1) |
申请公布日期 |
2013.10.17 |
申请号 |
US201313733030 |
申请日期 |
2013.01.02 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
RABKIN PETER;HIGASHITANI MASAAKI |
分类号 |
G11C16/04;G11C16/06;G11C16/08 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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