| 摘要 |
PURPOSE: A method for manufacturing a thin film is provided to prevent the characteristic degradation of a lower layer by using a reactive gas with low oxidation in an initial thin film deposition process. CONSTITUTION: A substrate is loaded in a chamber (S110). The substrate is exposed to a source gas (S210). The substrate is purged by a purge gas (S220). The substrate is exposed to a first reactive gas (S230). The substrate is exposed to a second reactive gas (S330). [Reference numerals] (AA) Start; (BB,DD) No; (CC,EE) Yes; (FF) End; (S110) Load a substrate; (S210,S310) Expose the substrate to a source gas; (S220,S240,S320,S340) Purge the substrate; (S230) Expose the substrate to a first reaction gas; (S250,S350) Has the substrate reached a desirable thickness ?; (S330) Expose the substrate to a second reaction gas |
