| 摘要 |
PURPOSE: A plasma processor and a plasma processing method are provided to perform an etching process of a rear side of a substrate and a bevel etching process continuously in one device. CONSTITUTION: A plasma processor includes a chamber(100), a top electrode(200), a bottom electrode(500), a substrate support(300), and a moving unit(700). The top electrode is prepared in an upper side of the chamber and sprays the inactive gas. The bottom electrode is arranged in a lower side of the chamber to face the top electrode and is combined or separated. The bottom electrode supports the substrate bevel to be exposed in a bevel etching process and sprays the active gas. The substrate support is prepared between the top electrode and the bottom electrode and the central area of the rear side of the substrate to be exposed in the etching process of the rear side of the substrate. The moving unit moves the substrate support in the bevel etching process and separates the substrate from the substrate support. |
